50 seaview blvd. port washington, ny 11050-4618 ph.(516)625-1313 fax(516)625-8845 e-mail: semi@sanrex.com dfa200aa80/160 three phase diode thyristor sanrex power module, dfa200aa , is complex isolated module which is designed for rash current circuit. it contains six diodes connected in a three phase bridge configuration, and a thyristor connected to a direct current line. ? this module is designed very compactly. because diode module and thyristor put together. ? this module is also isolated type between electorode terminal and mounting base. so you can put this module and other one together in a same fin. application ? inverter for ac or dc motor control, current stabilized power supply, switching power supply. mximum ratings 5 k1 ? v o m f t t p u i f s x j t f t q f d j g j f e ? diode symbol item ratings dfa200aa80 800 960 DFA200AA160 1600 1700 unit v rrm v rsm repetitive peak reverse voltage non-repetitive peak reverse voltage v v symbol item output current (d.c.) conditions ratings unit a i d three phase full wave, tc 1 96 ? 200 i fsm surge forward current
cycle, 50 / 60h z , peak value, non-repetitive 1850 / 2000 ka tj operating junction temperature 30 to 150 ? tstg storage temperature 30 to 135 ?
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n n y unit electrical characteristics symbol i rrm item repetitive peak reverse current,max. conditions t j 1 150 ? , v r =v rrm ratings 20 1.35 0.10 unit ma v fm forward voltage drop,max. i f 1 200a inst. measurement v rth j-c thermal impedance, max. junction to case total ? / w ? ? ? ( 3 v iso isolation breakdown voltage (r.m.s.) mounting torque a.c. 1minute 2500 v mounting m5 terminal m6 mass recommended value 1.5-2.5 15-25 recommended value 2.5-3.9 25-40 2.7 28 4.7 48 terminal m4 recommended value 1.0-1.4 10-14 1.5 15 n k m f k b g typical value 460
sanrex 50 seaview blvd. port washington, ny 11050-4618 ph.(516)625-1313 fax(516)625-8845 e-mail: semi@sanrex.com dfa200aa80/160 maximum ratings 5 k1 ? v o m f t t p u i f s x j t f t q f d j g j f e ? thyristor symbol item ratings dfa200aa80 800 960 DFA200AA160 1600 1700 unit v rrm v rsm repetitive peak reverse voltage non-repetitive peak reverse voltage v v 800 1600 v drm repetitive peak off-state voltage v symbol item conditions ratings 200 unit i t av average on-state current singl phase half wave. 180 ? conduction, tc 1 93 ? i tsm surge on-state current i 2 t i 2 t (for fusing) 1 ? 2 cycle, 50 / 60h z , peak value, non-repetitive value for one of surge current a 1850 / 2000 a 17000 a 2 s di ? dt critical rate of rise of on-state current i g 1 100ma | v d 1 1 ? 2 v drm | di g / dt 1 0.1a / s tj operating junction temperature tstg storage temperature mounting torque mounting m5 terminal m6 mass tj 1 125 ?? 135 ? recommended value 1.5-2.5 15-25 recommended value 2.5-3.9 15-25 typical value 200 a / s 30 to 135 ? v iso isolation breakdown voltage (r.m.s.) a.c. 1minute 2500 v 30 to 135 2.7 28 4.7 48 terminal m4 recommended value 1.0-1.4 15-25 1.5 15 460 ? n k m f k b g symbol item conditions ratings 50 unit i drm repetitive peak off-state current,max. i rrm repetitive peak reverse current,max. tj 1 135 ?| v d 1 v drm tj 1 135 ?| v d 1 v drm v tm peak on-state voltagea,max. i gt gate trigger current,max. dv ? dt critical rate of off-state voltaget,min. i t 1 200a inst. measurement v d 1 6v | i t 1 1a ma 50 ma 1.15 v 100 ma v gt gate trigger voltage,max. v d 1 6v | i t 1 1a 3 v tj 1 125 ?| v d 1 2 ? 3 v drm rth j-c thermal impedance, max. junction to case 500 v / s 0.18 ? / w electrical characteristics % * 0 % & . b y j n v n ' p s x b s e $ i b s b d u f s j t u j d t ' p s x b s e 7 p m u b h f % s p q 7 ' 7 } }
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